? semiconductor components industries, llc, 2006 february, 2006 ? rev. 10 1 publication order number: mj802/d mj802 high?power npn silicon transistor this transistor is for use as an output device in complementary audio amplifiers to 100?w atts music power per channel. features ? high dc current gain ? h fe = 25?100 @ i c = 7.5 a ? excellent safe operating area ? complement to the pnp mj4502 ? pb?free package is available* maximum ratings rating symbol value unit collector?emitter voltage v cer 100 vdc collector?base voltage v cb 100 vdc collector?emitter voltage v ceo 90 vdc emitter?base voltage v eb 4.0 vdc collector current i c 30 adc base current i b 7.5 adc total device dissipation @ t c = 25 c derate above 25 c p d 200 1.14 w w/ c operating and storage junction temperature range t j , t stg ?65 to +200 c thermal characteristics characteristics symbol max unit thermal resistance, junction?to?case jc 0.875 c/w maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. 30 ampere power transistor npn silicon 100 volts ? 200 watts http://onsemi.com marking diagram device package shipping ordering information mj802 to?204 100 units / tray mj802g to?204 (pb?free) 100 units / tray mj802g ayyww mex to?204aa (to?3) case 1?07 style 1 mj802 = device code g = pb?free package a = assembly location yy = year ww = work week mex = country of origin
mj802 http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? (t c = 25 c unless otherwise noted) ?????????????????????? ?????????????????????? characteristic ????? ????? ??? ??? ???? ???? ??? ??? ????????????????????????????????? ????????????????????????????????? ?????????????????????? ? ???????????????????? ? ?????????????????????? collector?emitter breakdown voltage (i c = 200 madc, r be = 100 ) ????? ? ??? ? ????? bv cer ??? ? ? ? ??? 100 ???? ? ?? ? ???? ? ??? ? ? ? ??? vdc ?????????????????????? ?????????????????????? ????? ????? ??? ??? ???? ???? ??? ??? ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collector?base cutoff current (v cb = 100 vdc, i e = 0) (v cb = 100 vdc, i e = 0, t c = 150 c) ????? ? ??? ? ? ??? ? ????? i cbo ??? ? ? ? ? ? ? ??? ? ? ???? ? ?? ? ? ?? ? ???? 1.0 5.0 ??? ? ? ? ? ? ? ??? madc ?????????????????????? ? ???????????????????? ? ?????????????????????? emitter?base cutoff current (v be = 4.0 vdc, i c = 0) ????? ? ??? ? ????? i ebo ??? ? ? ? ??? ? ???? ? ?? ? ???? 1.0 ??? ? ? ? ??? madc ????????????????????????????????? ????????????????????????????????? on characteristics (1) ?????????????????????? ? ???????????????????? ? ?????????????????????? dc current gain (note 1) (i c = 7.5 adc, v ce = 2.0 vdc) ????? ? ??? ? ????? h fe ??? ? ? ? ??? 25 ???? ? ?? ? ???? 100 ??? ? ? ? ??? ? ?????????????????????? ?????????????????????? ????? ????? ??? ??? ???? ???? ??? ??? ?????????????????????? ? ???????????????????? ? ?????????????????????? collector?emitter saturation voltage (i c = 7.5 adc, i b = 0.75 adc) ????? ? ??? ? ????? v ce(sat) ??? ? ? ? ??? ? ???? ? ?? ? ???? 0.8 ??? ? ? ? ??? vdc ?????????????????????? ? ???????????????????? ? ?????????????????????? base?emitter saturation voltage (i c = 7.5 adc, i b = 0.75 adc) ????? ? ??? ? ????? v be(sat) ??? ? ? ? ??? ? ???? ? ?? ? ???? 1.3 ??? ? ? ? ??? vdc ????????????????????????????????? ????????????????????????????????? dynamic characteristics ?????????????????????? ? ???????????????????? ? ?????????????????????? current gain ? bandwidth product (i c = 1.0 adc, v ce = 10 vdc, f = 1.0 mhz) ????? ? ??? ? ????? f t ??? ? ? ? ??? 2.0 ???? ? ?? ? ???? ? ??? ? ? ? ??? mhz 1. pulse test: pulse width 300 s, duty cycle 2.0%. 200 150 100 50 0 40 60 120 140 200 figure 1. power?temperature derating curve t c , case temperature ( c) 0 20 80 100 160 180 p d , power dissipation (watts)
mj802 http://onsemi.com 3 h fe , normalized current gain i c , collector current (amp) t j = 175 c 3.0 i c , collector current (amp) 1.0 2.0 0.7 1.0 0.5 0.1 figure 2. dc current gain figure 3. ??on? voltages v be(sat) @ i c /i b = 10 v ce = 2.0 v 25 c ? 55 c t j = 25 c 0.03 0.1 0.2 0.3 0.5 10 20 30 on" voltage (volts) 0.3 0.2 0.05 2.0 3.0 5.0 data shown is obtained from pulse tests and adjusted to nullify effect of i cbo . 2.0 1.8 1.4 1.6 1.2 0 1.0 0.8 0.6 0.4 0.2 1.0 0.03 0.1 0.2 0.3 0.5 10 20 30 0.05 2.0 3.0 5.0 v be @ v ce = 2.0 v v ce(sat) @ i c /i b = 10 i c , collector current (amp) 50 1.0 v ce , collector?emitter voltage (volts) 5.0 20 10 1.0 0.2 10 figure 4. active region safe operating area 100 5.0 2.0 0.5 0.1 20 2.0 3.0 100 50 30 secondary breakdown limited bonding wire limited thermal limitations t c = 25 c pulse duty cycle 10% t j = 200 c 100 s 1.0 ms 5.0ms dc the safe operating area curves indicate i c ? v ce limits below which the device will not enter secondary breakdown. collector load lines for specific circuits must fall within the applicable safe area to avoid causing a catastrophic failure. to insure operation below the maximum t j , power temperature derating must be observed for both steady state and pulse power conditions.
mj802 http://onsemi.com 4 package dimensions to?204 (to?3) case 1?07 issue z notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. all rules and notes associated with referenced to?204aa outline shall apply. dim min max min max millimeters inches a 1.550 ref 39.37 ref b ??? 1.050 ??? 26.67 c 0.250 0.335 6.35 8.51 d 0.038 0.043 0.97 1.09 e 0.055 0.070 1.40 1.77 g 0.430 bsc 10.92 bsc h 0.215 bsc 5.46 bsc k 0.440 0.480 11.18 12.19 l 0.665 bsc 16.89 bsc n ??? 0.830 ??? 21.08 q 0.151 0.165 3.84 4.19 u 1.187 bsc 30.15 bsc v 0.131 0.188 3.33 4.77 a n e c k ?t? seating plane 2 pl d m q m 0.13 (0.005) y m t m y m 0.13 (0.005) t ?q? ?y? 2 1 u l g b v h style 1: pin 1. base 2. emitter case: collector on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, r epresentation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 mj802/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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